? semiconductor components industries, llc, 2016 december, 2016 ? rev. 2 1 publication order number: ngtb25n120fl2w/d ngtb25n120fl2wg igbt - field stop ii this insulated gate bipolar transistor (igbt) features a robust and cost effective field stop ii trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. the igbt is well suited for ups and solar applications. incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage. features ? extremely efficient trench with field stop technology ? t jmax = 175 c ? soft fast reverse recovery diode ? optimized for high speed switching ? 10 s short circuit capability ? these are pb?free devices typical applications ? solar inverter ? uninterruptible power inverter supplies (ups) ? welding absolute maximum ratings rating symbol value unit collector?emitter voltage v ces 1200 v collector current @ t c = 25 c @ t c = 100 c i c 50 25 a pulsed collector current, t pulse limited by t jmax i cm 100 a diode forward current @ t c = 25 c @ t c = 100 c i f 50 25 a diode pulsed current, t pulse limited by t jmax i fm 100 a gate?emitter voltage transient gate?emitter voltage (t pulse = 5 s, d < 0.10) v ge 20 30 v power dissipation @ t c = 25 c @ t c = 100 c p d 385 192 w short circuit withstand time v ge = 15 v, v ce = 500 v, t j 150 c t sc 10 s operating junction temperature range t j ?55 to +175 c storage temperature range t stg ?55 to +175 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. to?247 case 340al c g 25 a, 1200 v v cesat = 2.0 v e off = 0.60 mj e device package shipping ordering information ngtb25n120fl2wg t o?247 (pb?free) 30 units / ra il www. onsemi.com a = assembly location y = year ww = work week g = pb?free package marking diagram 25n120fl2 aywwg g e c
ngtb25n120fl2wg www. onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction?to?case, for igbt r jc 0.39 c/w thermal resistance junction?to?case, for diode r jc 0.59 c/w thermal resistance junction?to?ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector?emitter breakdown voltage, gate?emitter short?circuited v ge = 0 v, i c = 500 a v (br)ces 1200 ? ? v collector?emitter saturation voltage v ge = 15 v, i c = 25 a v ge = 15 v, i c = 25 a, t j = 175 c v cesat ? ? 2.00 2.40 2.40 ? v gate?emitter threshold voltage v ge = v ce , i c = 400 a v ge(th) 4.5 5.5 6.5 v collector?emitter cut?off current, gate? emitter short?circuited v ge = 0 v, v ce = 1200 v v ge = 0 v, v ce = 1200 v, t j = 175 c i ces ? ? ? 2.5 0.4 ? ma gate leakage current, collector?emitter short?circuited v ge = 20 v , v ce = 0 v i ges ? ? 200 na input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 4420 ? pf output capacitance c oes ? 151 ? reverse transfer capacitance c res ? 81 ? gate charge total v ce = 600 v, i c = 25 a, v ge = 15 v q g ? 178 ? nc gate to emitter charge q ge ? 39 ? gate to collector charge q gc ? 83 ? switching characteristic, inductive load turn?on delay time t j = 25 c v cc = 600 v, i c = 25 a r g = 10 v ge = 0 v/ 15v t d(on) ? 87 ? ns rise time t r ? 28 ? turn?off delay time t d(off) ? 179 ? fall time t f ? 136 ? turn?on switching loss e on ? 1.95 ? mj turn?off switching loss e off ? 0.60 ? total switching loss e ts ? 2.55 ? turn?on delay time t j = 150 c v cc = 600 v, i c = 25 a r g = 10 v ge = 0 v/ 15v t d(on) ? 84 ? ns rise time t r ? 29 ? turn?off delay time t d(off) ? 185 ? fall time t f ? 245 ? turn?on switching loss e on ? 2.39 ? mj turn?off switching loss e off ? 1.26 ? total switching loss e ts ? 3.65 ? diode characteristic forward voltage v ge = 0 v, i f = 25 a v ge = 0 v, i f = 50 a, t j = 175 c v f ? ? 2.10 2.30 2.60 ? v reverse recovery time t j = 25 c i f = 25 a, v r = 400 v di f /dt = 200 a/ s t rr ? 154 ? ns reverse recovery charge q rr ? 1.3 ? c reverse recovery current i rrm ? 15 ? a product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
ngtb25n120fl2wg www. onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 8 6 5 4 3 2 1 0 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector?emitter voltage (v) v ge , gate?emitter voltage (v) 8 0 figure 5. v ce(sat) vs. t j t j , junction temperature ( c) 175 150 125 100 75 50 25 0 i c , collector current (a) i c , collector current (a) v ce , collector?emitter voltage (v) 7 v ge = 13 v to 20 v t j = 25 c 9 v 8 v 7 v 8 6 5 4 3 2 1 i c , collector current (a) 7 t j = 150 c 9 v 8 v 7 v 8 6 5 4 3 2 1 0 i c , collector current (a) 7 t j = ?55 c 9 v 8 v t j = 25 c t j = 150 c 200 v ge = 13 v to 20 v v ge = 13 v to 20 v 2457 ?75 ?50 ?25 2.5 2.0 1.5 1.0 0.5 0 figure 6. typical capacitance v ce , collector?emitter voltage (v) 90 80 50 40 30 20 10 0 c, capacitance (pf) 100 c ies c oes c res 70 60 10 v 11 v 10 v 11 v 10 v 11 v 9 t j = 25 c 35 30 25 15 10 5 0 10,000 1000 100 1 100 0 40 45 12 13 15 4.0 80 70 60 40 30 20 10 0 100 90 80 60 40 30 20 10 0 100 90 80 60 40 30 20 10 0 50 50 11 10 6 3 1 20 10 50 90 70 70 14 3.0 3.5 i c = 25 a i c = 15 a i c = 50 a
ngtb25n120fl2wg www. onsemi.com 4 typical characteristics figure 7. diode forward characteristics v f , forward voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 40 i f , forward current (a) t j = 25 c t j = 150 c 35 30 25 15 10 5 0 figure 8. typical gate charge q g , gate charge (nc) 100 50 0 0 2 4 6 8 12 14 16 v ge , gate?emitter voltage (v) 150 10 v ce = 600 v v ge = 25 v i c = 25 a figure 9. switching loss vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 switching loss (mj) 160 v ce = 600 v v ge = 15 v i c = 25 a rg = 10 e off figure 10. switching time vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 1000 switching time (ns) 160 v ce = 600 v v ge = 15 v i c = 25 a rg = 10 figure 11. switching loss vs. i c i c , collector current (a) 20 10 0 5 switching loss (mj) v ce = 600 v v ge = 15 v t j = 150 c rg = 10 e off figure 12. switching time vs. i c i c , collector current (a) 1000 switching time (ns) v ce = 600 v v ge = 15 v t j = 150 c rg = 10 3.5 t f t d(off) 10 t f t d(off) 30 10 0203050 10 3.0 2.0 1.0 0.5 0 40 60 4 3 2 1 0 40 60 20 200 1.5 2.5 e on 100 t d(on) t r e on 50 100 t d(on) t r
ngtb25n120fl2wg www. onsemi.com 5 typical characteristics t d(off) figure 13. switching loss vs. rg rg, gate resistor ( ) 45 35 25 15 5 switching loss (mj) v ce = 600 v v ge = 15 v t j = 150 c i c = 25 a 55 65 75 85 figure 14. switching time vs. rg rg, gate resistor ( ) 45 35 25 15 5 switching time (ns) 1000 55 65 75 85 figure 15. switching loss vs. v ce v ce , collector?emitter voltage (v) 550 500 450 400 350 switching loss (mj) 800 600 v ge = 15 v t j = 150 c i c = 25 a rg = 10 figure 16. switching time vs. v ce v ce , collector?emitter voltage (v) switching time (ns) 1000 figure 17. safe operating area v ce , collector?emitter voltage (v) i c , collector current (a) 1000 100 10 1 0.1 1 10 100 1000 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature figure 18. reverse bias safe operating area v ce , collector?emitter voltage (v) i c , collector current (a) 1 10 100 1000 v ge = 15 v, t c = 125 c 1000 100 10 1 t f t d(off) v ce = 600 v v ge = 15 v t j = 150 c i c = 25 a 10 v ge = 15 v t j = 150 c i c = 25 a rg = 10 10 6 5 4 3 2 1 0 2 1 0 550 500 450 400 350 800 600 10k 10k 650 700 750 4 3 650 700 750 100 t d(on) t r t f t d(on) t r 100 e on e off e on e off
ngtb25n120fl2wg www. onsemi.com 6 typical characteristics figure 19. igbt die self?heating square?wave duty cycle transient thermal response on?pulse width (s) 1 0.1 0.01 0.0001 1 square?wave peak r(t) ( c/w) 0.00001 50% duty cycle 20% 10% 5% 2% single pulse r jc = 0.39 junction c 1 c 2 r 1 r 2 duty factor = t 1 /t 2 peak t j = p dm x z jc + t c case c n r n 0.1 0.01 0.001 0.0001 0.001 r i ( c/w) c i (j/ c) 0.003402 0.000294 0.000001 0.002017 0.000965 0.013782 0.001409 0.001568 0.010366 0.002294 0.070949 0.048322 0.244018 0.0065442 0.4098053 figure 20. diode die self?heating square?wave duty cycle transient thermal response on?pulse width (s) square?wave peak r(t) ( c/w) 50% duty cycle 20% 10% 5% 2% single pulse 1 r jc = 0.59 junction case c 1 c 2 r 1 r 2 r n duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n 1 0.1 0.01 0.0001 0.000001 0.00001 0.001 r i ( c/w) c i (j/ c) 0.000294 0.003402 0.1 0.01 0.002017 0.000965 0.013782 0.001409 0.048322 0.244018 0.001568 0.010366 0.002294 0.070949 0.006544 0.409805
ngtb25n120fl2wg www. onsemi.com 7 0 20 40 60 80 100 120 0.01 0.1 1 10 100 ipk (a) 1000 freq (khz) figure 21. collector current vs. switching frequency t c = 110 c t c = 80 c figure 22. test circuit for switching characteristics
ngtb25n120fl2wg www. onsemi.com 8 figure 23. definition of turn on waveform
ngtb25n120fl2wg www. onsemi.com 9 figure 24. definition of turn off waveform
ngtb25n120fl2wg www. onsemi.com 10 package dimensions to?247 case 340al issue c e2 l1 d l b4 b2 b e 0.25 m ba m c a1 a 123 b e 2x 3x 0.635 m ba m a s p seating plane notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. slot required, notch may be rounded. 4. dimensions d and e do not include mold flash. mold flash shall not exceed 0.13 per side. these dimensions are measured at the outermost extreme of the plastic body. 5. lead finish is uncontrolled in the region defined by l1. 6. ? p shall have a maximum draft angle of 1.5 to the top of the part with a maximum diameter of 3.91. 7. dimension a1 to be measured in the region defined by l1. dim min max millimeters d 20.80 21.34 e 15.50 16.25 a 4.70 5.30 b 1.00 1.40 b2 1.65 2.35 e 5.45 bsc a1 2.20 2.60 c 0.40 0.80 l 19.80 20.80 q 5.40 6.20 e2 4.32 5.49 l1 3.81 4.32 p 3.55 3.65 s 6.15 bsc b4 2.60 3.40 note 6 4 note 7 q note 4 note 3 note 5 e2/2 note 4 f 2.655 --- f 2x on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ngtb25n120fl2w/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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